Epsilon
Epsilon Series Single-Wafer Epitaxial Reactors

Overview:
The main use of the Epsilon is for epitaxial growth of silicon and silicon germanium (SiGe) alloys. Our Epsilon products can also be used to heat wafers to high temperatures using integrated lamps to form a film on the surface of a single wafer by Chemical Vapor Deposition (CVD). In 2000, the Epsilon 2000 received a prestigious Editors' Choice Best Product Award from Semiconductor International magazine, honoring products that make a difference in semiconductor manufacturing. The Epsilon 2500 offers the highest throughput in the industry for advanced atmospheric epitaxial silicon applications. Our Epsilon 3000 was the first system to apply epi to 300mm wafers with epitaxial layers. We offer both stand-alone and modules that can be integrated with our Polygon cluster tools.

Stand-Alone Epsilon Reactor Series Features:

Epsilon 3000 300mm Epitaxial Reactor

  • Extension of Epsilon reliability, modularity and maintenance access
  • Flexibility in new production wafer handling automation
  • Process module is MESC cluster tool compatible
  • Clean room wall requirement is comparable to 200mm
  • Reduced Pressure (RP) capability
  • Factory automation features such as:

    • Mini environment, WIP automation, FOUP, AGV / OTS, and standard carriers

Epsilon 2000 200mm Epitaxial Reactor
  • Widest available range of atmospheric and reduced-pressure processes
  • Over 10 years of process development and product refinement
  • SMIF compatibility option now available with Delta Transfer System option

Unique Process Chamber Design

  • High velocity, laminar gas flow
  • Sharpest dopant transitions
  • Superior auto-doping control
  • Lowest metal contamination
  • Highest silicon growth rate
  • Lowest reactor chamber wall deposits
  • Advanced particle and mound control

Standalone Process Flexibility

  • Atmospheric and reduced-pressure processes in the same process chamber
  • Flexible process recipe architecture (R&D and DOE capability)
  • Wide flexibility in dopant uses
  • Seamless transition from process development to full-scale production

Largest RP/SiGe/SEG Installed Base

  • Unparalleled process development expertise
  • Largest SiGe installed base worldwide