Atomic Layer Deposition
About ALD
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| Country | # of ships | Profit | |
| 1 | China | 10.000.000 | 9.000.000€ |
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Poland | 50.000.000 | 10.000.000€ |
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France | 50.000.000 | 10.000.000€ |
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Netherlands | 100.000.000 | 20.000.000€ |
Future Proof Company
Our Culture
One of the benefits of working for a truly global company is the exciting opportunity to shine on a world stage. You'll be working with colleagues from a wide variety of business functions, backgrounds and cultures across the world.
Our ALD solutions
Atomic Layer Deposition (ALD) is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time. Our ALD products include the Pulsar® XP, EmerALD® XP and Synergis®.
Pulsar XP ALD
The benchmark ALD tool for the industry. It was the first system to be used for high-volume production
Synergis ALD
A high productivity 300mm tool for a wide range of thermal ALD applications
Pulsar XP ALD
The benchmark ALD tool for the industry. It was the first system to be used for high-volume production
Synergis ALD
A high productivity 300mm tool for a wide range of thermal ALD applications
Technology & Products
We have a proven track record of innovation spanning a wide range of technologies now used as the standard by the world’s leading semiconductor manufacturers.
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ALD ™
Atomic Layer Deposition is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time.
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Epitaxy ®
Atomic Layer Deposition is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time.
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Vertical Furnace ®
Atomic Layer Deposition is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time.
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Silicon Carbide ®
Atomic Layer Deposition is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time.
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PECVD ®
Atomic Layer Deposition is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time.