XP8® DCM™ PECVD
The XP8® DCM™ PECVD (Dual Chamber Module, Plasma Enhanced Chemical Vapor Deposition) system is a high-volume manufacturing (HVM) platform engineered for advanced dielectric film deposition, with expanded capabilities for SiO, SiCN for hybrid bonding, and stress-tunable SiN. Built on ASM’s proven XP8® architecture, it integrates four DCMs, totaling eight reaction chambers, to maximize productivity and process control. The system is globally qualified and supports a broad range of applications across both logic and memory nodes.
Major features
The XP8® DCM™ PECVD is a high productivity PECVD tool that addresses a broad range of dielectric films for various low-temperature deposition applications, such as interconnect layers, passivation layers, and etch stop layers.
XP8® DCM™ PECVD benefits
- Compact footprint: Enables efficient Fab footprint
- Robust process control: Offers independent chamber parameters (RF power, susceptor and showerhead temperature, liquid source flow) and shared parameters (gas flow, pressure, wall temperature) for precise chamber-to-chamber matching.
- High cleaning efficiency: Remote plasma cleaning and hot-wall reactor design reduce film buildup and extend component lifetime.
- True single wafer performance: Independent chambers ensure optimal process control per wafer.
- Low volume chambers: Designed for efficient gas usage and fast cycle times.
- Superior repeatability: Excellent chamber-to-chamber matching ensures consistent wafer-to-wafer results.
- Low cost of ownership: Engineered for reliability and minimal maintenance overhead.
- Fast maintenance access: Easy-open chamber design simplifies service and reduces downtime.
- Energy efficient: Optimized for reduced power consumption without compromising performance
Major applications
- Low-k and ultra low-k Interlayer dielectrics (ILDs) for memory and logic back-end-of-line (BEOL) applications, where interconnect isolation and signal integrity are critical. The system supports tuning of key material properties including dielectric constant (k), plasma-induced damage (PID), and elastic modulus (EM) to meet stringent device performance and reliability requirements.
- Dual capability for SiO films: One hardware design supports both thick and thin SiO (TEOS and Silane) deposition for packaging, logic, and memory applications.
- SiCN films for hybrid bonding (HB): DCM along with ASM’s state-of-the-art precursor chemistry, enable strong wafer bonding at lower temperatures with optimized copper diffusion barrier performance.
- Stress-tunable SiN: Supports low-temperature deposition of high-compressive SiN films for advanced packaging applications, helping reduce wafer warpage and improve integration with glass substrates.