Epitaxy
Epitaxy, often called Epi, is the process of depositing highly controlled silicon-based crystalline films, a critical process technology for creating advanced transistors and memory devices, and for wafer manufacturing.
About epitaxy
Epitaxy for advanced transistors
Epitaxy processes commonly involve silicon-based materials such as pure silicon (Si), silicon-germanium (SiGe), and phosphorous-doped silicon (SiP). These materials are used to engineer strain and form channel and source/drain regions in advanced transistors. Strained silicon is a silicon layer in which the atomic lattice is intentionally stretched or compressed to alter the spacing between atoms. This changes the band structure of silicon, allowing electrons (or holes) to move easily, which increases carrier mobility. As a result, transistors can switch faster and operate at lower power.
Selective epitaxy
Selective epitaxy is a process in which silicon or silicon-based compounds are deposited only on specific, predefined areas of a semiconductor wafer, while other regions are masked to prevent deposition. This technique is commonly used to selectively grow epitaxy layers in the source, drain, and sometimes channel regions of transistors. In a field-effect transistor (FET), the source is where charge carriers (such as electrons in n-type devices or holes in p-type devices) enter the channel, and the drain is where they exit. The gate lies between the source and drain and controls the conductivity of the channel by applying an electric field. This field allows or prevents current flow depending on the gate voltage. By incorporating dopant species into the process gases during selective epitaxy, engineers can precisely control the dopant concentration and profile of the epitaxy film, enabling customized electrical properties for different device regions.
Advanced temperature control
Epitaxy is a high-temperature process where precise temperature control is critical for ensuring uniform film quality and doping profiles. We have developed advanced temperature control technologies in our epitaxy tools, enabling improved film performance, consistency, and repeatability in high-volume manufacturing.
Surface preclean
Our Previum® preclean process module ensures optimal surface conditions for epitaxial deposition in semiconductor manufacturing, preparing silicon wafers for high-quality epitaxial growth by removing surface contaminants. Three solutions are available: Previum® V3 for native oxide removal, Previum® NEXT for simultaneous oxide and carbon removal plus silicon etching, and Previum® VP for advanced cleaning in high aspect ratio features.
Our epitaxy soloutions
Epitaxy involves the deposition of silicon or silicon compounds to form layers that help to continue and perfect the crystal structure of the bare silicon wafer below. It improves the electrical characteristics of the wafer surface, making it suitable for highly complex microprocessors and memory devices.
Epsilon® 2000
Our Epsilon 2000 single-wafer epitaxy tool offers a wide variety of epitaxy applications for 150 mm and 200 mm wafers. They range from high-temperature silicon for wafer preparation to low-temperature selective or non-selective silicon germanium (SiGe) for forming transistor strain layers.
Intrepid® ES™ & Intrepid® ESA™
The Intrepid® ES™ is our most advanced epitaxy deposition tool. It is designed for the most critical 300 mm applications for advanced transistors and memories.
Previum®
Our Previum® preclean module delivers superior surface preparation by removing contaminants from silicon wafers, ensuring optimal conditions for high-quality epitaxial deposition. Three solutions are available: Previum V3 for native oxide removal, Previum NEXT for simultaneous oxide and carbon removal plus silicon etching, and Previum VP for advanced cleaning in high aspect ratio features.
Technology and products
We have a proven track record of innovation, spanning a wide range of equipment and process technologies now used by the world’s leading semiconductor manufacturers.
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Atomic Layer Deposition
Atomic Layer Deposition, or ALD, is one of our technological solutions that works at a tiny level to make a huge difference.
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Silicon carbide
Process equipment for epitaxial deposition of silicon carbide (SiC) is a fast-growing market, mostly due to the material’s benefits for electric vehicles. With our history in epitaxy equipment, this is a natural fit for our line-up.
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PECVD
PECVD is another process solution we offer to deposit dielectric thin films at relatively low temperatures.
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Vertical furnaces
Vertical furnaces offer very high productivity solutions for a wide range of thermal processes including low pressure chemical vapor deposition (LPCVD), diffusion and oxidation.