Intrepid​​​® ES™ Intrepid® ESA™

The Intrepid​​​® ES™ is our most advanced epitaxy dep​osition tool. It is designed for the most critical 300mm applications for advanced transistors and memories. Our Intrepid® ESA™ is targeted for silicon-based analog/power devices and wafer-manufacturing applications, we offer our Intrepid ESA tool for 300mm silicon-based epitaxy. The Intrepid reactor architecture allows for thick Epi deposition in a single pass, a significant productivity benefit for our power and wafer customers.

Advanced technology for advanced applications.

Major features

Isothermal reactor environment in which the wafer is processed, which provides consistent and repeatable temperature control across the wafer and wafer-to-wafer. 

Innovative closed loop reactor control technology that enables optimal within wafer and wafer-to-wafer process performance. 

Up to four Intrepid process modules can be configured together on ASM’s common XP cluster platform to increase productivity. 

Integrated pre-clean using ASM Previum® process module is available for pre-epi surface preparation. 


Intrepid benefits 

  • Precise temperature control across the wafer surface, which enables highly uniform silicon layers; 

  • ​Improved film performance, within-wafer uniformity and enhanced reactor stability for wafer-to-wafer consistency; 

  • Multi-wafer processing before a required clean cycle, enabling industry highest throughput; 

  • High deposition rates and process control at low temperatures; 

  • Precise lamp heating with individual lamp controls for excellent temperature uniformity; 

  • One-piece, low-volume chamber design; 

  • Vacuum tight, high-speed gas distribution to deliver superior film performance and low metal contamination. 


Major applications 

  • CMOS transistor channel layers using epitaxial silicon, and other silicon-based materials such as silicon germanium; 

  • Strained silicon epitaxy​​​ layers to form the source and drain regions of advanced CMOS transistors; 

  • Silicon epitaxy layers for advanced 3D-NAND and DRAM applications. 

  • Silicon epitaxy for analog and power devices and wafer-manufacturing applications. 


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