PECVD is another process solution we offer to deposit dielectric thin films at relatively low temperatures.
What is it?
PECVD, or Plasma-Enhanced Chemical Vapor Deposition, is a specialized technology that utilizes plasma to enable deposition at lower temperatures — perfect for certain applications.
How it works
In PECVD, one or more gaseous reactants are used to form a solid insulating or conducting layer on the surface of a wafer. A plasma is formed from the gaseous chemicals in the reaction chamber.
In contrast to traditional CVD, where a higher temperature is used to cause reactions, in PECVD the plasma provides the energy needed to cause the reaction, which means that it can be done at a lower temperature. PECVD gives manufacturers a high throughput capability for the increasing demands of low thermal budget applications.
ASM’s key position in PECVD is on low-k films for advanced logic interconnects. Our Dragon XP8 PECVD tool addresses a broad range of dielectric films for various low-temperature deposition applications, such as interconnect, passivation, and etch-stop layers.
Technology and products
We have a proven track record of innovation, spanning a wide range of equipment and process technologies now used by the world’s leading semiconductor manufacturers.
Atomic Layer Deposition
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Process equipment for epitaxial deposition of silicon carbide (SiC) is a fast-growing market, mostly due to the material’s benefits for electric vehicles. With our history in epitaxy equipment, this is a natural fit for our line-up.
Vertical furnaces offer very high productivity solutions for a wide range of thermal processes including low pressure chemical vapor deposition (LPCVD), diffusion and oxidation.