Epsilon® 2000 Epitaxy
Our Epsilon 2000 single-wafer epitaxy tool offers a wide variety of epitaxy applications for 150mm and 200mm wafers. They range from high-temperature silicon for wafer preparation to low-temperature selective or non-selective silicon germanium (SiGe) for forming transistor strain layers.
Major features
The Epsilon reactor uses integrated lamps to heat the wafer to a specified temperature to grow an epitaxial silicon-based film using chemical vapor deposition (CVD). A unique feature of the Epsilon is the patented Bernoulli wand for non-contact wafer transfer.
Epsilon features the industry’s highest deposition rates at low temperatures due to its optimized performance with ASM’s Silcore® precursors.
Epsilon benefits
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Precise temperature control across the wafer surface, which enables highly uniform silicon layers;
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Bernoulli wand wafer transfer technology allows high temperature wafer transfer without damage to the wafer surfaces which enables high throughput compared to alternatives that have to delay the process to allow the wafer to cool down;
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Silcore® precursor provides silicon-based layers at high throughput, even at relatively lower temperatures compared to conventional precursors;
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PowerFill trench fill processing enables epitaxial layers to be sequentially deposited in deep trenches reducing the cost of traditional multiple process sequences.
Major applications
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Selective and non-selective doped silicon layers for transistor formation;
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Blanket silicon epitaxy for wafer manufacturing;
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Epitaxy for analog mixed signal, bipolar and BiCMOS devices;
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Deep trench fill epitaxy for power devices.