ASM launches SiC epitaxy system: PE2O8

New product officially introduced at ICSCRM 2024

At this year’s International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), ASM introduced its latest silicon carbide (SiC) epitaxy platform. The PE2O8 delivers high yields, outstanding productivity, and low cost of ownership, enabling our customers to create microchips that can do more with less power.

Innovation conference

The annual ICSCRM conference is a place for industry leaders to advance new breakthroughs in SiC-based semiconductors. These innovations are essential for key semiconductor applications like electric vehicles, green energy, and the latest AI data centers. 

This year, ASM revealed its latest benchmark SiC epitaxy product: the PE2O8. This dual chamber system can process both 6" and 8" wafers. With its compact chambers utilizing inductive heating, and cross flow reactor, it enables benchmark process uniformity and high yield. The new dual chamber platform, coupled with the inherently small chamber size, means it also offers a low cost of ownership. 

Our team of ASMers at ISCRM during the launch of the PE2O8

Staying ahead of what’s next

ASM’s SiC technology is expected to play a crucial role in the industry going forward, as it enables next-generation chips for power devices that are smaller, faster, cheaper, and more energy efficient.  

Want to find out more about the PE2O8? Watch this short video or visit here. For more information about our silicon carbide innovations, check out our technology page on SiC epitaxy 

 

 

Find out more about our benchmark PE2O8 in this in-depth tech explainer video.

Latest news

News - September 30, 2024

ASM launches SiC epitaxy system: PE2O8

ASM launches SiC epitaxy system: PE2O8

Read more
News - August 28, 2024

All about Epi

All about Epi

Read more
News - August 08, 2024

Celebrating decades at the industry forefront of ALD

Celebrating decades at the industry forefront of ALD

Read more