XP8® JQCM™ PEALD
XP8® JQCM™ is a high-performance 300 mm plasma-enhanced atomic layer deposition (PEALD) system, purpose-built for advanced silicon nitride (SiN) deposition in logic semiconductor manufacturing. Engineered for next-generation device fabrication, XP8® JQCM™ delivers uniform, reliable thin films with exceptional scalability, productivity, and process control.
Major features
XP8® JQCM™ is a high-performance 300 mm plasma-enhanced atomic layer deposition (PEALD) system engineered for exceptional scalability and productivity in advanced semiconductor manufacturing. Supporting up to four independent quad chamber process modules (PM) per platform—with each PM integrating four reaction chambers (RC)—XP8® JQCM™ delivers high throughput and flexible process control within a compact footprint. Its advanced reactor design maximizes precursor efficiency, minimizes ALD cycle time, and enables low-temperature deposition of high-quality silicon nitride (SiN) films. With precise control over film stress and step coverage, XP8® JQCM™ ensures reliable, uniform thin films that meet the stringent demands of next-generation logic devices.
XP8® JQCM™ PEALD benefits
- Independent reaction chambers (RCs) for optimal performance
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Small-volume RCs for efficient gas use and rapid processing
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Excellent RC-to-RC and chamber-to-chamber matching for superior wafer-to-wafer repeatability
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Low cost of ownership
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Easy-access chamber design for fast maintenance
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Energy-efficient operation
Major applications
- SiN liners, spacers, and etch-stop layers
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Spacer Defined Multiple Patterning
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Void-free gap-fill with stress tunability for high aspect ratio structure applications