XP8® Magma PEALD
XP8® Magma is a state-of-the-art 300 mm plasma-enhanced atomic layer deposition (PEALD) system engineered for advanced node memory and logic manufacturing. It delivers high productivity and supports a comprehensive range of dielectric PEALD processes, including advanced silicon oxide (SiO) and silicon nitride (SiN) applications, ensuring exceptional film quality for next-generation devices.
Major features
The XP8® Magma is a state-of-the-art 300 mm plasma-enhanced atomic layer deposition (PEALD) system, purpose-built for advanced node memory and logic manufacturing. Featuring up to four high-performance process reaction chambers (RC) per platform, Magma enables simultaneous processing of up to 16 wafers—delivering exceptional productivity within a compact footprint. Magma supports a comprehensive range of dielectric PEALD processes, including advanced silicon oxide (SiO) and silicon nitride (SiN) applications. Magma ensures high-quality, reliable film deposition for next-generation devices.
XP8® Magma PEALD benefits
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Independent RCs for optimal performance and process flexibility
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Small-volume RCs for efficient gas usage and rapid processing
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Outstanding RC-to-RC and chamber-to-chamber matching for superior wafer-to-wafer repeatability
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Low cost of ownership and energy-efficient operation
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Easy-access chamber design for fast, simplified maintenance
Major applications
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SiO liners, spacers, and etch stop layers
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High aspect ratio gap-fill SiO
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TSV SiO liner
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Raising-Pad (R-Pad) SiN for VNAND
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Low-temperature SiN for gap-fill, spacer and CMP stopper