The PE1O6A and PE1O8 are single chamber SiC epitaxy tools featuring a single wafer cross flow reactor with best-in-class on-wafer performance. The systems include full cassette-to-cassette operation with high-temperature loading/unloading.
PE1O6A / PE1O8 benefits
- Excellent thickness control <1% and dopant uniformity <2%;
- High grow rate up to 60 µm/hr;
- High productivity including long time between preventive maintenance;
- High reliability and repeatability;
- Small compact footprint.
- SiC epitaxy for power device transistors;
- SiC epitaxy on bare wafers.