Process equipment for epitaxial deposition of silicon carbide (SiC) is a fast-growing market, mostly due to the material’s benefits for electric vehicles. With our history in epitaxy equipment, this is a natural fit for our line-up.
About silicon carbide
Moving right along
The SiC epitaxy equipment market is growing fast due to the growing electrification of the automotive industry, with vehicle-power electronics transitioning from silicon to SiC-based materials. SiC devices allow electric vehicles to have longer battery life and a greater range.
Our SiC tools use an epitaxy process to deposit the SiC materials, either on bare substrates or as part of the transistor device fabrication process. Because of its wide band gap, SiC is highly efficient at high voltages, offering higher power efficiency and increased power density, resulting in reduced component weight and size and faster battery-charging times.
Our newest product line is silicon carbide (SiC) epitaxy, following our acquisition in Q4 2022 of LPE, the Italy-based maker of epitaxial reactors for SiC and silicon.
PE106A / PE108 SiC
Our PE106A and PE108 silicon carbide (SiC) tools use an epitaxy process to deposit the SiC materials on either bare wafers or as part of the transistor device fabrication process.
Technology and products
We have a proven track record of innovation, spanning a wide range of equipment and process technologies now used by the world’s leading semiconductor manufacturers.
Atomic Layer Deposition
Atomic Layer Deposition, or ALD, is one of our technological solutions that works at a tiny level to make a huge difference.
Epitaxy, often called Epi, is the process of depositing highly controlled silicon-based crystalline films, a critical process technology for creating advanced transistors and memories, and for wafer manufacturing.
PECVD is another process solution we offer to deposit dielectric thin films at relatively low temperatures.
Vertical furnaces offer very high productivity solutions for a wide range of thermal processes including low pressure chemical vapor deposition (LPCVD), diffusion and oxidation.