Intrepid​​​​​​​® ES™​ Epitaxy

​​The Intrepid​​​® ES™ is our most advanced epitaxy dep​osition tool. It is designed for the most critical 300mm a​pplications for advanced transistors and memories.


Available processes are silicon based compounds, such as Silicon (Si), Silicon-Germanium (SiGe) and Silicon Phosphorus (SiP), used for transistor strain and channel layers. Strained Silicon is a silicon layer in which the atoms are stretched beyond their normal interatomic distance, allowing higher electron mobility. This results in faster transistor switching at lower power.​


Isothermal reactor environment in which the wafer is processed, which provides consistent and repeatable temperature control across the wafer and wafer-to-wafer.

Innovative closed loop reactor control technology that enables optimal within wafer and wafer-to-wafer process performance.

Up to four Intrepid process modules can be configured together on ASM’s common XP cluster platform to increase productivity.

Integrated pre-clean using ASM Previum® process module is available for pre-epi surface preparation.


  • Precise temperature control across the wafer surface, which enables highly uniform silicon layers;
  • ​Improved film performance, within-wafer uniformity and enhanced reactor stability for wafer-to-wafer consistency;
  • Multi-wafer processing before a required clean cycle, enabling industry highest throughput;
  • High deposition rates and process control at low temperatures;
  • Precise lamp heating with individual lamp controls for excellent temperature uniformity;
  • One- piece, low volume chamber design;
  • Vacuum tight, high-speed gas distribution to deliver superior film performance and low metal contamination.


  • CMOS transistor channel layers using epitaxial silicon, and other silicon based materials such as silicon germanium;
  • Strained silicon epitaxy​​​ layers to form the source and drain regions of advanced Complementary Metal Oxide Semiconductor (CMOS) transistors;
  • Silicon epitaxy layers for advanced 3D-NAND and DRAM applications