Plasma-Enhanced Atomic Layer Deposition
ALD is a surface controlled layer-by-layer process for the deposition of thin films with atomic layer precision. PEALD is a further advancement on ALD. It enables improved film properties at lower temperatures.
WHAT HAPPENS DURING PEALD?
PEALD uses specific chemical precursors just like in thermal ALD. However, it also makes use of cycling an RF-plasma to create the necessary chemical reactions in a highly controlled manner.
WHAT ARE THE BENEFITS?
PEALD technology retains the key benefits of ALD, such as excellent conformality, thickness control and within wafer uniformity, while processing at lower temperatures. It also provides the additional benefits of the ability to control the tuning of the film properties and a capability for pre- and post-deposition in-situ treatments.
